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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co-packaged IGBT's save space, reduce assembly time and cost. * Industry Standard High Power TO-247 Package with Isolated Mounting Hole * High Speed Eoff: 150 mJ/A typical at 125C * High Short Circuit Capability - 10 ms minimum * Soft Recovery Free Wheeling Diode is included in the package * Robust High Voltage Termination * Robust RBSOA MGW12N120D Motorola Preferred Device IGBT & DIODE IN TO-247 12 A @ 90C 20 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340K-01 STYLE 4 TO-247AE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL Value 1200 1200 20 20 12 40 125 0.98 - 55 to 150 10 1.0 1.4 45 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Designer's is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MGW12N120D ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 5.0 Adc) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 10 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Gate Charge (VCC = 720 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 5.0 Adc) (IEC = 5.0 Adc, TJ = 125C) (IEC = 10 Adc) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC -- -- -- 2.26 1.37 2.86 3.32 -- 4.18 (continued) Vdc (VCC = 720 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 720 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH Vd H RG = 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 74 83 76 231 0.55 1.21 1.76 66 87 120 575 1.49 2.37 3.86 29 13 12 -- -- -- -- 1.33 1.88 3.21 -- -- -- -- -- -- -- -- -- -- nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 1003 126 106 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 12 8.0 -- -- 2.71 3.78 3.5 3.37 -- 4.42 Vdc mV/C Mhos Vdc V(BR)CES 1200 -- ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc -- 870 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit 2 Motorola IGBT Device Data MGW12N120D ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless otherwise noted) Characteristic DIODE CHARACTERISTICS -- continued Reverse Recovery Time ( (IF = 10 Adc, VR = 720 Vd , Ad , Vdc, dIF/dt = 100 A/s) Reverse Recovery Stored Charge Reverse Recovery Time ( (IF = 10 Adc, VR = 720 Vd , Ad , Vdc, dIF/dt = 100 A/s, TJ = 125C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) LE -- 13 -- nH trr ta tb QRR trr ta tb QRR -- -- -- -- -- -- -- -- 116 69 47 0.36 234 149 85 1.40 -- -- -- -- -- -- -- -- C C ns ns Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 40 TJ = 25C IC, COLLECTOR CURRENT (AMPS) 30 17.5 V 20 VGE = 20 V IC, COLLECTOR CURRENT (AMPS) 40 TJ = 125C 30 17.5 V 20 15 V 12.5 V 10 10 V 8 0 0 1 2 3 4 5 6 7 8 VGE = 20 V 15 V 12.5 V 10 7.5 V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 24 IC, COLLECTOR CURRENT (AMPS) 20 16 12 8 4 0 TJ = 125C 25C VCE = 10 V 250 s PULSE WIDTH VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 3.8 3.6 3.4 3.2 Figure 2. Output Characteristics IC = 10 A 7.5 A 3.0 2.8 2.6 2.4 2.2 2 - 50 VGE = 15 V 250 s PULSE WIDTH - 25 0 25 50 75 100 125 150 5A 5 7 9 11 13 15 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 3 MGW12N120D VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 1600 TJ = 25C VGE = 0 V C, CAPACITANCE (pF) 1200 Cies 800 16 QT 12 Q1 8 Q2 400 Cres 0 0 5 Coes 4 TJ = 25C IC = 10 A VGE = 15 V 0 5 10 15 20 25 30 35 10 15 20 25 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-to-Emitter Voltage versus Total Charge 3 Eon , TURN-ON ENERGY LOSSES (mJ) 3 Eon , TURN-ON ENERGY LOSSES (mJ) VCC = 720 V VGE = 15 V TJ = 125C IC = 10 A 2.6 2.2 1.8 1.4 1 0.6 0.2 0 2.5 VCC = 720 V VGE = 15 V RG = 20 IC = 10 A 2 7.5 A 7.5 A 5A 1.5 5A 1 10 20 30 40 50 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (C) Figure 7. Turn-On Losses versus Gate Resistance Figure 8. Turn-On Losses versus Case Temperature 2.4 Eon , TURN-ON ENERGY LOSSES (mJ) 2.2 2 1.8 1.6 1.4 1.2 1 5 6 7 8 9 10 VCC = 720 V VGE = 15 V RG = 20 TJ = 125C IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn-On Losses versus Collector Current 4 Motorola IGBT Device Data MGW12N120D I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 25 IC, COLLECTOR CURRENT (AMPS) 100 20 TJ = 125C 10 15 10 25C 5 0 1 VGE = 15 V RGE = 20 TJ = 125C 1 10 100 1000 10,000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0.1 0 1 2 3 4 VFEC, EMITTER-TO-COLLECTOR VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage Drop Figure 11. Reverse Biased Safe Operating Area 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01 Figure 12. Thermal Response Motorola IGBT Device Data 5 MGW12N120D PACKAGE DIMENSIONS 0.25 (0.010) M -Q- TBM -T- E -B- U L R 1 2 3 C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P -Y- V F D 0.25 (0.010) M H J DIM A B C D E F G H J K L P Q R U V G YQ S STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR CASE 340K-01 TO-247AE ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 MGW12N120D/D Motorola IGBT Device Data |
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